DocumentCode :
3098242
Title :
Longitudinal-type leky surface acoustic wave on LiNbO3 with high-velocity thin film
Author :
Matsukura, Fumihiro ; Uematsu, M. ; Hosaka, Kazumoto ; Kakio, Shoji
Author_Institution :
Interdiscipl. Grad. Sch. of Med. & Eng., Univ. of Yamanashi, Kofu, Japan
fYear :
2013
fDate :
21-25 July 2013
Firstpage :
1692
Lastpage :
1695
Abstract :
The loss reduction of a longitudinal-type leaky surface acoustic wave (LLSAW) by loading with a dielectric thin film with a higher velocity than the substrate is proposed. An aluminum nitride (AlN) thin film was adopted as a high-velocity thin film, and the propagation properties of an LLSAW on an X36°Y-LiNbO3 (LN) substrate were investigated theoretically and experimentally. First, the elastic constants c11 and c44 of an AlN thin film deposited by RF magnetron sputtering were determined from the measured phase velocity of a Rayleigh-type SAW, and they were 61 and 68% of those of a single-crystal AlN thin film. Next, from the theoretical calculation for the LLSAW on the X36°Y-LN substrate, it was found that the LLSAW attenuation can be reduced to zero by loading with an AlN thin film. Then, the propagation properties of the LLSAW on the X36°Y-LN substrate were measured by using an interdigital transducer pair with a wavelength (λ) of 8 εm. When the film thickness was 0.25 λ, the measured propagation loss decreased from 0.28 dB/λ for the sample without a film to 0.03 dB/λ.
Keywords :
III-V semiconductors; acoustic wave propagation; aluminium compounds; elastic constants; lithium compounds; semiconductor growth; semiconductor thin films; sputter deposition; surface acoustic waves; wide band gap semiconductors; AlN; LiNbO3; RF magnetron sputtering; Rayleigh-type SAW; dielectric thin film; elastic constants; film thickness; high-velocity thin film; interdigital transducer pair; longitudinal-type leaky surface acoustic wave attenuation; loss reduction; phase velocity; propagation loss; propagation properties; single-crystal aluminum nitride thin film; wavelength 8 mum; Attenuation; Films; Frequency measurement; III-V semiconductor materials; Loading; Substrates; Temperature measurement; aluminum nitride thin film; highvelocity thin film; longitudinal-type leaky surface acoustic wave; loss reduction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium (IUS), 2013 IEEE International
Conference_Location :
Prague
ISSN :
1948-5719
Print_ISBN :
978-1-4673-5684-8
Type :
conf
DOI :
10.1109/ULTSYM.2013.0431
Filename :
6725124
Link To Document :
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