DocumentCode
309826
Title
Surface processing by gas cluster ion beams
Author
Toyoda, Noriaki ; Matsuo, Jiro ; Yamada, Isao
Author_Institution
Ion Beam Eng. Exp. Lab., Kyoto Univ., Japan
fYear
1996
fDate
16-21 Jun 1996
Firstpage
808
Lastpage
811
Abstract
Surface processing with gas cluster ion beams which contain hundreds or even many thousands of atoms or molecules has been studied. The sputtering yields of various materials with Ar cluster ions are about one order of magnitude higher than those produced by Ar monomer ions with the same energy. Also, the sputtering yields of Si and W are chemically enhanced with SF6 cluster ion beams. The surface roughness of Cu dramatically decreased when bombarded with Ar cluster ion beams compared with Ar monomer ion beams, and there is no roughening mechanism. This smoothing effect of gas cluster ion beams is applicable for very hard materials, such as CVD diamond films
Keywords
ion-surface impact; sputtering; surface topography; surface treatment; Ar; C; CVD diamond film; Cu; SF6; Si; W; gas cluster ion beam; hard material; sputtering yield; surface processing; surface roughness; surface smoothing; Acceleration; Argon; Atomic beams; Atomic layer deposition; Atomic measurements; Dispersion; Ion beams; Size measurement; Smoothing methods; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location
Austin, TX
Print_ISBN
0-7803-3289-X
Type
conf
DOI
10.1109/IIT.1996.586589
Filename
586589
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