• DocumentCode
    309826
  • Title

    Surface processing by gas cluster ion beams

  • Author

    Toyoda, Noriaki ; Matsuo, Jiro ; Yamada, Isao

  • Author_Institution
    Ion Beam Eng. Exp. Lab., Kyoto Univ., Japan
  • fYear
    1996
  • fDate
    16-21 Jun 1996
  • Firstpage
    808
  • Lastpage
    811
  • Abstract
    Surface processing with gas cluster ion beams which contain hundreds or even many thousands of atoms or molecules has been studied. The sputtering yields of various materials with Ar cluster ions are about one order of magnitude higher than those produced by Ar monomer ions with the same energy. Also, the sputtering yields of Si and W are chemically enhanced with SF6 cluster ion beams. The surface roughness of Cu dramatically decreased when bombarded with Ar cluster ion beams compared with Ar monomer ion beams, and there is no roughening mechanism. This smoothing effect of gas cluster ion beams is applicable for very hard materials, such as CVD diamond films
  • Keywords
    ion-surface impact; sputtering; surface topography; surface treatment; Ar; C; CVD diamond film; Cu; SF6; Si; W; gas cluster ion beam; hard material; sputtering yield; surface processing; surface roughness; surface smoothing; Acceleration; Argon; Atomic beams; Atomic layer deposition; Atomic measurements; Dispersion; Ion beams; Size measurement; Smoothing methods; Sputtering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. Proceedings of the 11th International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-3289-X
  • Type

    conf

  • DOI
    10.1109/IIT.1996.586589
  • Filename
    586589