DocumentCode :
309826
Title :
Surface processing by gas cluster ion beams
Author :
Toyoda, Noriaki ; Matsuo, Jiro ; Yamada, Isao
Author_Institution :
Ion Beam Eng. Exp. Lab., Kyoto Univ., Japan
fYear :
1996
fDate :
16-21 Jun 1996
Firstpage :
808
Lastpage :
811
Abstract :
Surface processing with gas cluster ion beams which contain hundreds or even many thousands of atoms or molecules has been studied. The sputtering yields of various materials with Ar cluster ions are about one order of magnitude higher than those produced by Ar monomer ions with the same energy. Also, the sputtering yields of Si and W are chemically enhanced with SF6 cluster ion beams. The surface roughness of Cu dramatically decreased when bombarded with Ar cluster ion beams compared with Ar monomer ion beams, and there is no roughening mechanism. This smoothing effect of gas cluster ion beams is applicable for very hard materials, such as CVD diamond films
Keywords :
ion-surface impact; sputtering; surface topography; surface treatment; Ar; C; CVD diamond film; Cu; SF6; Si; W; gas cluster ion beam; hard material; sputtering yield; surface processing; surface roughness; surface smoothing; Acceleration; Argon; Atomic beams; Atomic layer deposition; Atomic measurements; Dispersion; Ion beams; Size measurement; Smoothing methods; Sputtering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
Type :
conf
DOI :
10.1109/IIT.1996.586589
Filename :
586589
Link To Document :
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