TaOX memresitive devices with ferromagnetic electrodes

Author

Jang, Hyuk-Jae ; Shrestha, Pragya ; Kirillov, Oleg ; Baumgart, Helmut ; Cheung, Kin P. ; Jurchescu, Oana D. ; Richter, Curt A.

Author_Institution

Semicond. & Dimensional Metrol. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

Recently, two-terminal metal-oxide-based devices showing memresitive behavior have been attracting much attention due to their promising characteristics for next generation memory and logic technologies [1]. Among different types of memresitive mechanisms, TaO_X based devices combined with copper and platinum electrodes have been known to utilize metal precipitation to create conductive channel inside of the oxide thin film when a low electric voltage (only around 1V between top and bottom electrodes) is applied [1]-[3]. This unique mechanism can deliver an opportunity to explore a new type of multifunctional device; for example, the formed metal nano-filament inside of TaO_X can be used as an electron spin transport channel [4].

Keywords

copper; electron spin; ferromagnetic materials; memristors; platinum; tantalum compounds; TaO_x; conductive channel; copper electrode; electron spin transport channel; ferromagnetic electrodes; memresitive devices; metal nanofilament; metal precipitation; multifunctional device; next generation logic technology; next generation memory technology; oxide thin film; platinum electrode; two-terminal metal oxide-based devices; Copper; Educational institutions; Electrodes; Switches; Temperature dependence; USA Councils; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135188

Filename

6135188