Effective amplification of microwaves in structures with field and secondary emission

A new design of microwave distributed amplifier (DA) has been proposed, in which RF voltage is applied to anode-gate gap, FEA is a source of unmodulated current, anode is more negative than gate, and RF electron current is caused by secondary emission modulation from anode due to energy modulation of primary electrons. It is important that there is no RF voltage on FEA, so it´s current can be strongly stabilized by resistive layer, and low transconductance and high microwave losses don´t influence DA parameters. Preliminary analysis (neglecting space charge of secondary electrons) has shown that secondary electrons´ flow ceases instantly if minimum of potential arises in anode gap at anode voltage varying during RF period. This corresponds to infinite transconductance. Therefore one can expect that real transconductance (accounting space charge) should have enormous value