• DocumentCode
    3098377
  • Title

    Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure

  • Author

    Watanabe, Takayuki ; Tombet, Stephane Boubanba ; Tanimoto, Yudai ; Wang, Yuye ; Minamide, Hiroaki ; Ito, Hiromasa ; Fateev, Denis ; Popov, Viacheslav ; Coquillat, Dominique ; Knap, Wojciech ; Otsuji, Taiichi

  • Author_Institution
    Rsch. Inst. Electr. Commun., Tohoku Univ., Sendai, Japan
  • fYear
    2011
  • fDate
    7-9 Dec. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report on ultrahigh sensitive, broadband terahertz (THz) detectors based on asymmetric double-grating-gate (A-DGG) HEMTs demonstrating a record responsivity of 2.2 kV/W at 1 THz. Hydrodynamic nonlinearities of two-dimensional (2D) plasmons in high-electron-mobility transistors (HEMTs) are promising for fast and sensitive rectification/detection of THz radiation [1], which can be applied to real-time THz imaging/spectroscopic analysis and future THz wireless communications [2]. Recently, InP- and GaN-based HEMTs as well as Si-MOSFETs have demonstrated improved responsivities [3,4], approaching 1 kV/W at 1 THz by introducing narrow-band dipole antenna structure merged with the gate electrode [3].
  • Keywords
    III-V semiconductors; MOSFET; dipole antennas; gallium compounds; high electron mobility transistors; indium compounds; plasmonics; plasmons; silicon; terahertz wave detectors; wide band gap semiconductors; 2D plasmons; A-DGG HEMT; GaN; InP; Si; THz imaging; THz radiation detection; THz radiation rectification; THz wireless communications; asymmetric dual-grating gate HEMT structure; broadband terahertz detectors; gate electrode; high-electron-mobility transistors; hydrodynamic nonlinearities; narrow-band dipole antenna structure; silicon MOSFET; spectroscopic analysis; two-dimensional plasmons; ultrahigh-sensitive plasmonic terahertz detector; Detectors; Educational institutions; Fingers; HEMTs; Logic gates; Plasmons; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium (ISDRS), 2011 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4577-1755-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2011.6135193
  • Filename
    6135193