Graded silicon-germanium channel tunnel field effect transistor (G-TFET), an approach to increase ION without compromising IOFF

In this paper, a new modified thin body double gate tunneling field effect transistor (G-TFET) on SOI with graded silicon germanium channel is proposed. Gradually changing Ge composition is used to achieve (i) reduced band gap, (ii) reduced barrier width, and (iii) enhanced accelerating intrinsic field, which enhances device performance parameters. Results show G-TFET with graded SiGe channel can be successfully employed for achieving significant increase in ON current without compromising OFF current.