Title :
Progress in nonpolar and semipolar GaN materials and devices
Author_Institution :
Mater. Dept., Univ. of California, Santa Barbara, CA, USA
Abstract :
Devices grown on c-plane GaN suffer from large internal electric fields due to discontinuities in spontaneous and piezoelectric polarization effects which cause charge separation between holes and electrons in quantum wells and limits the radiative recombination efficiency. Nonpolar GaN devices, such as in the m-plane (1100), are free from polarization related electric fields since the polar c-axis is parallel to any heterointerfaces. Semipolar GaN-based devices have reduced electric fields and in some cases, such as (1122), show a high propensity for Indium update for InGaN quantum wells.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; quantum well devices; semiconductor quantum wells; wide band gap semiconductors; InGaN; c-plane gallium nitride; charge separation; electric fields; heterointerfaces; indium gallium nitride quantum wells; nonpolar gallium nitride materials; piezoelectric polarization effect; radiative recombination efficiency; semipolar gallium nitride devices; Educational institutions; Electric fields; Gallium nitride; Light emitting diodes; Performance evaluation; Substrates;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135199