• DocumentCode
    3098520
  • Title

    Emerging memory devices

  • Author

    Wong, H. -S Philip

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2011
  • fDate
    7-9 Dec. 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    This talk gives an overview of emerging memory devices, drawing upon our recent research work on phase change memory (PCM) and metal oxide resistive switching memory (RRAM). We will examine the technical challenges for emerging non-volatile memory devices going forward including device physics and scaling properties, followed by suggestions for directions for future research.
  • Keywords
    phase change memories; PCM device; RRAM device; device physics; metal oxide resistive switching memory; nonvolatile memory devices; phase change memory; scaling properties; Hard disks; Memory management; Nonvolatile memory; Performance evaluation; Phase change materials; Power demand; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium (ISDRS), 2011 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4577-1755-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2011.6135200
  • Filename
    6135200
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3098520