Title :
Emerging memory devices
Author :
Wong, H. -S Philip
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
This talk gives an overview of emerging memory devices, drawing upon our recent research work on phase change memory (PCM) and metal oxide resistive switching memory (RRAM). We will examine the technical challenges for emerging non-volatile memory devices going forward including device physics and scaling properties, followed by suggestions for directions for future research.
Keywords :
phase change memories; PCM device; RRAM device; device physics; metal oxide resistive switching memory; nonvolatile memory devices; phase change memory; scaling properties; Hard disks; Memory management; Nonvolatile memory; Performance evaluation; Phase change materials; Power demand; Random access memory;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135200
