Physics-based, closed-form DC model for lightly-doped short channel triple-gate MOSFETs including three-dimensional effects

In this paper, we present a compact DC model for lightly-doped, short-channel SOI triple-gate MOSFETs, which is based on an analytical solution of 3D Poisson´s equation by the conformal mapping technique. Model parameters will be discussed in relation to structural and technological parameters of real devices. No fitting parameters are introduced for modeling of three-dimensional effects on the device´s electrostatics, model parameters are only given by device structure. The model is in very good agreement with measurements down to 60nm and TCAD with 20nm effective channel length.