Impact of hetero-interface on the photoresponse of GAN/SIC separate absorption and multiplication avalanche photodiodes

Author

Sampath, Anand V. ; Zhou, Qiugui ; Enck, Ryan ; Gallinat, Chad S. ; Rotella, Paul, Jr. ; Mcintosh, Dion ; Shen, Paul ; Campbell, J. ; Wraback, Michael

Author_Institution

Army Res. Labs., Adelphi, MD, USA

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

III-Nitride/SIC separate absorption and multiplication avalanche photodiodes (SAM APDs) provide a new approach for realizing high sensitivity, high gain and low dark current detectors with a response that is tunable over a wide spectral range. However, the heterojunction interface plays a significant role in the performance of these detectors due to presence of 1) interface charge arising from the difference in polarization between III-Nitride and SiC as well as 2) defects at the interface resulting from lattice mismatch. In this paper we discuss the growth and fabrication of GaN/SiC SAM APDs and analyze the behavior in the context of these two factors.

Keywords

III-V semiconductors; avalanche photodiodes; gallium compounds; silicon compounds; wide band gap semiconductors; GaN-SiC; III-nitride-silicon carbide separate absorption; gallium nitride-silicon carbide SAM APD; heterointerface; heterojunction interface; high-gain current detector; high-sensitivity current detector; interface charge; lattice mismatch; low-dark current detector; multiplication avalanche photodiodes; photoresponse; Absorption; Detectors; Educational institutions; Electric fields; Gallium nitride; Shape; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135205

Filename

6135205