Analytical model for ion-implanted 4H silicon carbide metal-semiconductor field-effect transistors

Author

Wang, S.G. ; Zhang, Z.Y.

Author_Institution

Sch. of Inf. Sci. & Technol., Northwest Univ., Xi´´an, China

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

Ion-implanted SiC MESFETs have some excellent characteristics such as low noise performance, high frequencies, surface planarity, simplicity and lower cost of fabrication, and flexibility and precise control of the doping profiles [1]. In order to help the designer and user, an analytical model for the boxlike profile ion-implanted 4H-SiC MESFETs has been given. Poisson´s equation has been solved to obtain the current-voltage characteristics of the SiC MESFETs. The expressions for the channel depth, the pinch off voltage, and the drain current are given. The output current-voltage characteristics of ion-implanted 4H-SiC MESFETs and the effect of temperature on the drain current are investigated with this model.

Keywords

Poisson equation; Schottky gate field effect transistors; doping profiles; electrical conductivity; ion implantation; silicon compounds; wide band gap semiconductors; Poisson equation; SiC; channel depth; current-voltage characteristics; doping profile; drain current; ion-implanted 4H silicon carbdde metal-semiconductor field-effect transistor; ion-implanted SiC MESFET; surface planarity; temperature effect; Economic indicators; Educational institutions; MESFETs; Materials; Silicon carbide; Temperature; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135208

Filename

6135208