Title :
Thin film transistors with buckled gate
Author :
Sambandan, Sanjiv
Author_Institution :
Dept. of Instrum. & Appl. Phys., Indian Inst. of Sci., Bangalore, India
Abstract :
Thin film transistors (TFTs) based on non-crystalline semiconductors are of interest for large area electronics [1]. On flexible substrates, there exists a possibility of the gate buckling so as to create corrugations between source and drain. We study the influence of corrugating the gate on the transfer characteristics of the TFT.
Keywords :
thin film transistors; flexible substrates; gate buckling; noncrystalline semiconductors; thin film transistors; transfer characteristics; Capacitance; Electric fields; Electric potential; Electrodes; Leakage current; Logic gates; Thin film transistors;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135214
