A new method for predicting distribution of DRAM retention time

Author

Mori, Yuki ; Yamada, Ken-ichi ; Kamohara, Shiro ; Moniwa, Masahiro ; Ohyu, Kiyonori ; Yamanaka, Toshiaki

Author_Institution

Central Res. Lab., Hitachi Ltd, Tokyo, Japan

fYear

2001

fDate

2001

Firstpage

7

Lastpage

11

Abstract

A new method for predicting the distribution of retention time of a dynamic random access memory (DRAM) by using the test element group (TEG) has been developed. The TEG is constructed of memory cells which are connected in parallel, so that the sum of memory-cell leakage currents can be measured. We verified that the t_ret main distribution can be statistically predicted from the distribution of TEG leakage current. Furthermore, we determined the measurement condition for detecting some TEGs that contain anomalously leaky cells, which limit the DRAM refreshing interval

Keywords

DRAM chips; integrated circuit reliability; integrated circuit testing; leakage currents; statistical analysis; DRAM retention time; DRAM retention time distribution prediction; anomalously leaky cells; dynamic random access memory; measurement condition; memory cells; memory-cell leakage currents; statistical prediction; test element group; Circuit testing; Current measurement; DRAM chips; Equivalent circuits; Leakage current; MOSFET circuits; Predictive models; Probability distribution; Random access memory; Tail;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International

Conference_Location

Orlando, FL

Print_ISBN

0-7803-6587-9

Type

conf

DOI

10.1109/RELPHY.2001.922873

Filename

922873