Title :
Analysis of erratic bits in flash memories
Author :
Chimenton, Andrea ; Pellati, Paolo ; Olivo, Piero
Author_Institution :
Dipartimento di Ingegneria, Ferrara Univ., Italy
Abstract :
This work presents experimental results concerning erratic behavior in flash memories obtained by tracking the threshold voltage dynamics during any single erase operation and providing a deeper insight into their physical nature. The particular shape of the experimental erase curves allows the derivation of a nearly linear relationship between the amplitude of erratic threshold shifts and the equivalent barrier height controlling Fowler-Nordheim injection
Keywords :
charge injection; flash memories; integrated circuit reliability; integrated circuit testing; Fowler-Nordheim injection; equivalent barrier height; erase curve shape; erratic bit analysis; erratic threshold shift amplitude; flash memories; near-linear relationship; single erase operation; threshold voltage dynamics tracking; Circuits; Conductivity; Contamination; Dielectric devices; Flash memory; Nonvolatile memory; Shape control; Testing; Threshold voltage; Tunneling;
Conference_Titel :
Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-6587-9
DOI :
10.1109/RELPHY.2001.922875
