Title :
Impact of bonding temperature on the performance of In0.6Ga0.4As Metamorphic High Electron Mobility Transistor (mHEMT) device packaged using Flip-Chip-on-Board (FCOB) technology
Author :
Che-Yang Chiang ; Heng-Tung Hsu ; Chien-I Kuo ; Ching-Te Wang, Ching-Te Wang ; Wee Chin Lim ; Chang, Edward Yi
Author_Institution :
Dept. of Commun. Eng., Yuan Ze Univ., Chungli, Taiwan
Abstract :
In this study, we fabricated 150-nm In0.6Ga0.4As mHEMT devices using in-house fabrication process. The devices were packaged using FCOB technology on organic substrates. The packaged device exhibited favorable DC characteristics with IDS = 350 mA/mm and a transconductance of 600 mS/mm at VDS = 0.5V with a maximum available gain (MAG) 6.5 dB at 60 GHz. The impact of temperature setting during the bonding process on the DC and RF performance was experimentally investigated. RF performance degradation was observed at high bonding temperature due to the induced thermomechanical stress. The stress was mainly from the mismatch in the coefficient of thermal expansion (CTE) of the GaAs chip and organic substrate.
Keywords :
bonding processes; flip-chip devices; high electron mobility transistors; FCOB technology; In0.6Ga0.4As; bonding process; bonding temperature; flip chip on board technology; frequency 60 GHz; mHEMT device; metamorphic high electron mobility transistor; organic substrates; thermal expansion coefficient; thermomechanical stress; voltage 0.5 V; Bonding; Flip chip; Performance evaluation; Radio frequency; Substrates; Temperature; mHEMTs; HEMTs; bonding; flip chip; stress; thermal expansion;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2012 Asia-Pacific
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4577-1330-9
Electronic_ISBN :
978-1-4577-1331-6
DOI :
10.1109/APMC.2012.6421784
