Impact of bonding temperature on the performance of In0.6Ga0.4As Metamorphic High Electron Mobility Transistor (mHEMT) device packaged using Flip-Chip-on-Board (FCOB) technology

Author

Che-Yang Chiang ; Heng-Tung Hsu ; Chien-I Kuo ; Ching-Te Wang, Ching-Te Wang ; Wee Chin Lim ; Chang, Edward Yi

Author_Institution

Dept. of Commun. Eng., Yuan Ze Univ., Chungli, Taiwan

fYear

2012

fDate

4-7 Dec. 2012

Firstpage

938

Lastpage

940

Abstract

In this study, we fabricated 150-nm In_0.6Ga_0.4As mHEMT devices using in-house fabrication process. The devices were packaged using FCOB technology on organic substrates. The packaged device exhibited favorable DC characteristics with I_DS = 350 mA/mm and a transconductance of 600 mS/mm at V_DS = 0.5V with a maximum available gain (MAG) 6.5 dB at 60 GHz. The impact of temperature setting during the bonding process on the DC and RF performance was experimentally investigated. RF performance degradation was observed at high bonding temperature due to the induced thermomechanical stress. The stress was mainly from the mismatch in the coefficient of thermal expansion (CTE) of the GaAs chip and organic substrate.

Keywords

bonding processes; flip-chip devices; high electron mobility transistors; FCOB technology; In_0.6Ga_0.4As; bonding process; bonding temperature; flip chip on board technology; frequency 60 GHz; mHEMT device; metamorphic high electron mobility transistor; organic substrates; thermal expansion coefficient; thermomechanical stress; voltage 0.5 V; Bonding; Flip chip; Performance evaluation; Radio frequency; Substrates; Temperature; mHEMTs; HEMTs; bonding; flip chip; stress; thermal expansion;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2012 Asia-Pacific

Conference_Location

Kaohsiung

Print_ISBN

978-1-4577-1330-9

Electronic_ISBN

978-1-4577-1331-6

Type

conf

DOI

10.1109/APMC.2012.6421784

Filename

6421784