DocumentCode :
3098935
Title :
Characterization of Al2O3-HfO2-Al2O3 sandwiched MIM capacitor under DC and AC stresses
Author :
Kwak, Ho-Young ; Kwon, Hyuk-Min ; Kwon, Sung-Kyu ; Jang, Jae-Hyung ; Choi, Woon-Il ; Chung, Yi-Sun ; Lee, Jong-Kon ; Lim, Min-Gyu ; Lee, Song-Jae ; Lee, Hi-Deok
Author_Institution :
Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea
fYear :
2011
fDate :
7-9 Dec. 2011
Firstpage :
1
Lastpage :
2
Abstract :
In this work, three kinds of voltage stress, constant, unipolar, and bipolar voltage stresses are used to analyze the MIM capacitor with Al2O3/ HfO2/ Al2O3 structure. The relative variations of capacitance and voltage linearity show the greatest change by the bipolar voltage stress. The main cause of the variation of the capacitor parameters is due to the charge trapping during both the positive and negative bias regions.
Keywords :
MIM devices; aluminium compounds; capacitors; hafnium compounds; AC stress; Al2O3-HfO2-Al2O3; DC stress; bipolar voltage stress; charge trapping; constant voltage stress; negative-bias region; positive-bias region; sandwiched MIM capacitor; unipolar voltage stress; voltage linearity; Aluminum oxide; Capacitance; Dielectrics; Hafnium compounds; MIM capacitors; Reliability; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
Type :
conf
DOI :
10.1109/ISDRS.2011.6135223
Filename :
6135223
Link To Document :
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