• DocumentCode
    3098935
  • Title

    Characterization of Al2O3-HfO2-Al2O3 sandwiched MIM capacitor under DC and AC stresses

  • Author

    Kwak, Ho-Young ; Kwon, Hyuk-Min ; Kwon, Sung-Kyu ; Jang, Jae-Hyung ; Choi, Woon-Il ; Chung, Yi-Sun ; Lee, Jong-Kon ; Lim, Min-Gyu ; Lee, Song-Jae ; Lee, Hi-Deok

  • Author_Institution
    Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea
  • fYear
    2011
  • fDate
    7-9 Dec. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work, three kinds of voltage stress, constant, unipolar, and bipolar voltage stresses are used to analyze the MIM capacitor with Al2O3/ HfO2/ Al2O3 structure. The relative variations of capacitance and voltage linearity show the greatest change by the bipolar voltage stress. The main cause of the variation of the capacitor parameters is due to the charge trapping during both the positive and negative bias regions.
  • Keywords
    MIM devices; aluminium compounds; capacitors; hafnium compounds; AC stress; Al2O3-HfO2-Al2O3; DC stress; bipolar voltage stress; charge trapping; constant voltage stress; negative-bias region; positive-bias region; sandwiched MIM capacitor; unipolar voltage stress; voltage linearity; Aluminum oxide; Capacitance; Dielectrics; Hafnium compounds; MIM capacitors; Reliability; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium (ISDRS), 2011 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4577-1755-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2011.6135223
  • Filename
    6135223
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3098935