DocumentCode :
3098946
Title :
Study the effect of applied voltage on propagation delay of bilayer graphene nanoribbon transistor
Author :
Ghadiry, M.H. ; Manaf, Asrulnizam Abd ; Mousavi, S.M. ; Sadeghi, H.
Author_Institution :
Sch. of Electr. & Electron. Eng., Univ. Sains Malaysia, Pulau, Malaysia
fYear :
2011
fDate :
7-9 Dec. 2011
Firstpage :
1
Lastpage :
2
Abstract :
Fundamental limitations of CMOS technology and anticipations of Moore´s law have motivated researchers to find several alternatives for these devices such as nanowire, carbon nanotube and graphene nanoribbon. In this work firstly, we develop an analytical model for quantum capacitance of monolayer and bilayer graphene. Secondly, resistance of the channel is modelled based on conductance of the nanoribbon and finally propagation delay is calculated by using resistance and capacitance.
Keywords :
MOSFET; graphene; nanoribbons; C; CMOS technology; MOSFET; Moore law; bilayer graphene nanoribbon transistor; carbon nanotube; channel resistance; monolayer graphene; nanoribbon conductance; nanowire; propagation delay; quantum capacitance; Logic gates; Mathematical model; Nanoscale devices; Propagation delay; Quantum capacitance; Resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
Type :
conf
DOI :
10.1109/ISDRS.2011.6135226
Filename :
6135226
Link To Document :
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