Title :
Modeling of interface scattering of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs
Author :
Wang, Lin ; Hu, Weida ; Chen, Xiaoshuang ; Lu, Wei
Author_Institution :
Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China
Abstract :
The carrier transport properties of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs (DH-HEMTs) have been investigated. Previous hydrodynamic model exhibits significant discrepancies with the experimental results when used for simulating electrical properties of these DH-HEMTs. With the modification of low field mobility by taking into consideration several scattering mechanisms at InGaN/GaN interface, the simulation results show good agreement with experimental data.
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; electric properties; gallium compounds; high electron mobility transistors; hydrodynamics; indium compounds; semiconductor heterojunctions; wide band gap semiconductors; AlGaN-GaN-InGaN-GaN; carrier transport properties; double-heterojunction HEMT; electrical properties; hydrodynamic model; interface scattering; low field mobility; Aluminum gallium nitride; DH-HEMTs; Gallium nitride; MODFETs; Phonons; Scattering; DH-HEMT; hot electron effect; interface roughness scattering; phonon scattering;
Conference_Titel :
Computer Research and Development (ICCRD), 2011 3rd International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-61284-839-6
DOI :
10.1109/ICCRD.2011.5764197
