Title :
A new conduction mechanism for the anomalous cells in thin oxide flash EEPROMs
Author :
Modelli, A. ; Gilardoni, F. ; Ielmini, Daniele ; Spinelli, A.S.
Author_Institution :
Central R&D, STMicroelectron., Agrate Brianza, Italy
Abstract :
The temperature dependence of the anomalous leakage current in the tail cells of flash memory is investigated on arrays with different oxide thicknesses. It is shown that both the conduction mechanism and the annealing kinetics of the leakage current change when the thickness is reduced below about 8 nm, becoming independent of temperature. The microscopic conduction of the tail cells is analyzed to investigate the conduction model in thin oxides
Keywords :
annealing; dielectric thin films; electrical conductivity; flash memories; integrated circuit modelling; integrated circuit testing; integrated memory circuits; leakage currents; 8 nm; SiO2-Si; annealing kinetics; anomalous cells; anomalous leakage current; conduction mechanism; conduction model; flash memory; leakage current; microscopic conduction; oxide thickness; tail cells; temperature dependence; thin oxide flash EEPROMs; thin oxides; Annealing; CMOS technology; Capacitors; EPROM; Flash memory; Leakage current; Oxidation; Tail; Temperature; Tunneling;
Conference_Titel :
Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-6587-9
DOI :
10.1109/RELPHY.2001.922883
