Title :
N-channel versus p-channel flash EEPROM-which one has better reliabilities
Author :
Chung, S.S. ; Liaw, S.T. ; Yih, C.M. ; Ho, Z.H. ; Lin, C.J. ; Kuo, D.S. ; Liang, M.S.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this paper, a comprehensive study of n- and p-channel flash cells in terms of performance and reliability is presented. In particular, hot-carrier reliability issues such as disturbs and endurance in both n- and p-channel flash cells are also investigated. The most serious reliability issue in p-channel flash memory, drain disturb, can be overcome by using a DINOR structure. These results can be used as a guideline for designers. Although the n-channel flash cell exhibits higher electron mobilities, the p-channel flash cell is most advantageous with features such as high speed, better reliability, and low power. These properties meet scaling trends to make this cell a promising candidate for future flash memory applications
Keywords :
CMOS memory circuits; electron mobility; flash memories; hot carriers; integrated circuit design; integrated circuit reliability; low-power electronics; CMOS technology; DINOR structure; design; disturbs; drain disturb; electron mobility; endurance; flash cells; flash memory applications; hot-carrier reliability; n-channel flash EEPROM; n-channel flash cells; p-channel flash EEPROM; p-channel flash cells; reliability; scaling; Application software; CMOS technology; Channel hot electron injection; Current measurement; Flash memory; Guidelines; Hot carriers; Nonvolatile memory; Reliability engineering; Tunneling;
Conference_Titel :
Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-6587-9
DOI :
10.1109/RELPHY.2001.922884
