An integrated differential 60 GHz sliding-IF receiver in SiGe BiCMOS

Author

Sun, Yaoming ; Schmalz, Klaus ; Glisic, Srdjan ; Wang, Ruoyu ; Scheytt, Christoph J.

Author_Institution

Circuit Design Dept., IHP, Frankfurt Oder, Germany

Volume

3

fYear

2011

fDate

11-13 March 2011

Firstpage

297

Lastpage

300

Abstract

This paper presents an integrated 60 GHz sliding-IF receiver fabricated in a 0.25 μm SiGe BiCMOS technology. The receiver chain consists of a front-end and an IF IQ demodulator centered at around 12 GHz. A 48 GHz PLL is used to generate the front-end LO signal and the IF quadrature LO signals. The measured LNA noise figure is around 6.6 dB. Digital words are used to control the VGA gains and IQ mismatches through a Serial Peripheral Interface (SPI) to reduce the number of bond pads. The receiver chip has been mounted onto an application board, where an on-board Vivaldi antenna has already been fabricated. An overall conversion gain of 81 dB has been measured with tuning range larger than 30 dB. In a real in-door environment, error-free transmission with a data-rate of 3.6 Gbit/s has been observed over 15 meters.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; millimetre wave antennas; millimetre wave receivers; peripheral interfaces; phase locked loops; semiconductor materials; IF IQ demodulator; IF quadrature LO signals; IQ mismatches; LNA noise figure; PLL; SiGe; SiGe BiCMOS technology; VGA gain control; bit rate 3.6 Gbit/s; digital words; distance 15 m; frequency 48 GHz; frequency 60 GHz; front-end LO signal; gain 81 dB; integrated differential sliding-IF receiver; on-board Vivaldi antenna; serial peripheral interface; size 0.25 mum; Baseband; Demodulation; Gain; Mixers; Noise measurement; Receivers; Tuning; 60 GHz receiver; 60 GHz transceiver; SiGe BiCMOS; bond wire compensation; chip-on-board; milimetter wave circuits; sliding-IF;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Research and Development (ICCRD), 2011 3rd International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-61284-839-6

Type

conf

DOI

10.1109/ICCRD.2011.5764199

Filename

5764199