Fabrication of ZnO homojunction by Al-As-N tridoping

In recent years, ZnO has received great attention for optoelectronic applications (UV LEDs and LDs) because of its splendor properties such as high excitonic binding energy, high optical gain, and high radiation & temperature stability. In order to develop these ZnO based optoelectronic devices, the first step is the fabrication of high quality n- and p-type ZnO thin films. It is easy to grow low resistive and stable n-ZnO films because of the presence of native donor defects (V_O and Zn_i). But, the p-conductivity can be realized only by suppressing these defects with suitable dopants. Different doping methods such as monodoping, codoping and cluster doping have been tried to realize low resistive p-ZnO but only few of them have succeeded despite the stability of p-conduction remains to be answered [1].