Domain-wall spintronic memristor for capacitance and inductance sensing

The dynamic properties of a propagating magnetic domain-wall in a magnetic device are strongly affected by the device geometry [1]. Domain-wall spintronic memristors (Fig.1) [2] exhibit therefore a geometry dependent memristive behavior. We propose novel capacitance and inductance sensing schemes using two different spatial shapes of domain-wall spintronic memristors and also a novel nanoelectronic device (Fig.2), which is capable of fast and simultaneous capacitance (in the pico-farad range) and inductance (in the micro-henry range) sensing. The device reduces the problem of sensing capacitance and inductance to a simple resistance measurement. From the definition of the memristor [3], [4] through its constitutive relation, it can be shown that when the derivative of the memristance/memductance to charge/flux is constant (Fig.4), the memristor is suited for capacitance/inductance measurement. The capacitance/inductance of a capacitor/an inductor connected in series/parallel to the memristor is determined by measuring changes in the memristance/memductance, which is determined by the domain-wall position [2] (Fig.3), and the voltage/current across/through the capacitor/inductor.