DocumentCode
3099233
Title
2D analytical DC model for nanoscale Schottky barrier DG-MOSFETs
Author
Schwarz, Mike ; Holtij, Thomas ; Kloes, Alexander ; Iñíguez, Benjamín
Author_Institution
Competence Center for Nanotechnol. & Photonics, Tech. Hochschule Mittelhessen, Giessen, Germany
fYear
2011
fDate
7-9 Dec. 2011
Firstpage
1
Lastpage
2
Abstract
In this paper, we present a current model for lightly doped Schottky barrier Double-Gate MOSFETs based on the 2D conformal mapping technique [1] for the electrostatics [2], [3]. The ambipolar behavior is predicted by the superposition of the separately estimated electron and hole currents. Our model includes essential 2D effects combined with diffusion effects and shows accurate I-V curves for channel lengths down to 22 nm.
Keywords
MOSFET; Schottky barriers; conformal mapping; electrostatics; 2D analytical DC model; 2D conformal mapping technique; I-V curves; ambipolar behavior; diffusion effects; electron currents; electrostatics; essential 2D effects; hole currents; lightly Schottky double-gate MOSFET; nanoscale Schottky barrier DG-MOSFET; size 22 nm; superposition; Analytical models; Charge carrier processes; Electric fields; Logic gates; Probability; Thermionic emission; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4577-1755-0
Type
conf
DOI
10.1109/ISDRS.2011.6135243
Filename
6135243
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