Title :
Design and analysis of multi-gate field-effect-diodes for embedded memory
Author :
Chbili, Zakariae ; Yang, Yang ; Li, Qiliang ; Ioannou, Dimitris E.
Author_Institution :
ECE Dept., George Mason Univ., Fairfax, VA, USA
Abstract :
Memory arrays consume a very large area in chip designs; yet memory cell scaling lags significantly transistor scaling. With transistor channel lengths in the nanoscale regime, the six transistor static random access memory cell (6T-SRAM) and the single transistor dynamic memory (DRAM) cell both suffer from excessive leakage current. Consequently, there is a widely recognized need for urgent progress in memory technology.
Keywords :
DRAM chips; SRAM chips; embedded systems; field effect devices; semiconductor diodes; chip design; embedded memory; leakage current; memory array; memory cell scaling; multigate field-effect-diode; nanoscale regime; single transistor dynamic memory cell; transistor channel length; transistor scaling; transistor static random access memory cell; Cathodes; Educational institutions; Logic gates; P-i-n diodes; Random access memory; Transistors; USA Councils;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135246
