Characterization and modeling of 18–40GHz mm-wave tunneling diode detector

Author

Wang, Xiao ; Xue, Hongxi

Author_Institution

Dept. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

3

fYear

2011

fDate

11-13 March 2011

Firstpage

362

Lastpage

365

Abstract

This paper presents a new AC equivalent circuit model for 18-40GHz tunneling diode detector. The mm-wave diode equivalent circuit consists of normal diode components, as well as parasitic parameters, e.g., resonance capacitor, resistor and inductor, to accurately model high-frequency I-V behaviors. Experiment confirms that the new model works well across the 18-40GHz spectrum and enables accurate matching design for tunneling diode detector circuits with reduced reflection down to -12dB.

Keywords

equivalent circuits; inductors; millimetre wave detectors; millimetre wave diodes; resistors; tunnel diodes; AC equivalent circuit; frequency 18 GHz to 40 GHz; high-frequency I-V behaviors; inductor; mm-wave tunneling diode detector; normal diode components; parasitic parameters; resistor; resonance capacitor; Detectors; Equivalent circuits; Integrated circuit modeling; Reflection; Schottky diodes; Testing; Tunneling; RTD; Resonance tunneling diode detector; matching; mm-wave; reflection;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Research and Development (ICCRD), 2011 3rd International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-61284-839-6

Type

conf

DOI

10.1109/ICCRD.2011.5764214

Filename

5764214