Title :
A reliability methodology for low temperature data retention in floating gate non-volatile memories
Author :
Kuhn, P.J. ; Hoefler, A. ; Harp, T. ; Hornung, B. ; Paulsen, R. ; Burnett, David ; Higman, J.M.
Author_Institution :
Semicond. Products Sector, Motorola Inc., Austin, TX, USA
Abstract :
A reliability assessment methodology consisting of a statistical model and designed experiments to evaluate the leakage mechanism responsible for low temperature data retention (LTDR) in floating gate nonvolatile memories is presented. The nature of the leakage mechanism and the methodology necessary to observe and accurately assess this phenomenon are described
Keywords :
design of experiments; integrated circuit modelling; integrated circuit reliability; integrated memory circuits; random-access storage; LTDR; designed experiments; floating gate nonvolatile memories; leakage mechanism; low temperature data retention; reliability assessment methodology; reliability methodology; statistical model; Equations; Flash memory; Modems; Nonvolatile memory; Physics; Semiconductor device reliability; Solid modeling; Temperature distribution; Tunneling; Voltage;
Conference_Titel :
Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-6587-9
DOI :
10.1109/RELPHY.2001.922912
