Band alignment of TFET heterojunctions and post deposition annealing effects by internal photoemission spectroscopy

Author

Zhang, Qin ; Zhou, Guangle ; Xing, Huili G. ; Seabaugh, Alan C. ; Xu, Kun ; Kirillov, Oleg A. ; Richter, Curt A. ; Nguyen, Nhan V.

Author_Institution

Semicond. & Dimensional Metrol. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

The tunneling field-effect transistor (TFET) has been attracting increasing attention for low-voltage logic application [1]. Recently, III-V semiconductor TFETs are being extensively explored, showing higher on-state current than Si TFETs [1]-[3]. However, low subthreshold swings (SS) have not yet been demonstrated on any III-V TFETs, possibly due to the high density of traps at the high-k oxide and semiconductor interface [2]-[3]. It has been shown that post deposition anneal (PDA) can improve SS by reducing the interface trap density in III V TFETs [2].

Keywords

III-V semiconductors; annealing; field effect transistors; photoelectron spectra; III-V semiconductor TFET; PDA; SS; TFET heterojunctions; band alignment; high-k oxide; interface trap density reduction; internal photoemission spectroscopy; low-subthreshold swings; low-voltage logic application; on-state current; post deposition annealing effects; semiconductor interface; silicon TFET; tunneling field-effect transistor; Aluminum oxide; Indium gallium arsenide; Indium phosphide; Logic gates; Personal digital assistants; Photonics; USA Councils;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135253

Filename

6135253