DocumentCode :
3099480
Title :
Determination of oxide properties with a new fast tunneling current measurement protocol
Author :
Chiquet, P. ; Micolau, G. ; Laffont, R. ; Lalande, F. ; Regnier, A. ; Bouteille, B.
Author_Institution :
IM2NP, Aix-Marseille Univ., Marseille, France
fYear :
2011
fDate :
7-9 Dec. 2011
Firstpage :
1
Lastpage :
2
Abstract :
In conclusion, dynamic measurement of tunneling currents allows the monitoring of various oxide degradation effects for a wide range of stress times (from a few microseconds to a few hours), including the typical durations required for ´write´ and ´erase´ operations on NVM cells. Transient effects such as drain deep depletion have been evidenced. Overall a better electric characterization of floating gate / tunnel oxide / drain structures can be expected from this new experimental protocol, leading to a better understanding of NVM cells.
Keywords :
electric current measurement; random-access storage; transient analysis; tunnelling; NVM cells; drain deep depletion; electric characterization; floating gate-tunnel oxide-drain structures; oxide degradation effect monitoring; oxide properties; stress times; transient effects; tunneling current measurement protocol; write-erase operations; Capacitors; Current measurement; Degradation; Logic gates; Nonvolatile memory; Transient analysis; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
Type :
conf
DOI :
10.1109/ISDRS.2011.6135254
Filename :
6135254
Link To Document :
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