An application-specific usage model for flash memory read disturb reliability

Author

Harp, T.S. ; Kuhn, P.J. ; Higman, J.M. ; Paulsen, R.E. ; Hornung, B.E.

Author_Institution

Non-Volatile Memory Technol. Center, Motorola Inc., Austin, TX, USA

fYear

2001

fDate

2001

Firstpage

280

Lastpage

282

Abstract

A statistical model to evaluate the reliability of a NOR flash memory array due to read disturb failures, which accounts for application-specific use profiles, has been developed. This model applies to any physical read disturb mechanism whose time to failure can be modeled by a statistical distribution. Monte Carlo simulations of failure mechanisms that follow Weibull and lognormal statistics are used to illustrate the statistical nature of the problem. Worst case product reliability varies widely from using only one row to all rows in the array, depending on the statistical nature of the failures

Keywords

Monte Carlo methods; Weibull distribution; circuit simulation; failure analysis; flash memories; integrated circuit modelling; integrated circuit reliability; integrated memory circuits; log normal distribution; statistical analysis; Monte Carlo simulations; NOR flash memory array; Weibull statistics; application-specific usage model; application-specific use profiles; array row usage; failure mechanisms; flash memory read disturb reliability; lognormal statistics; physical read disturb mechanism; read disturb failures; reliability; statistical distribution; statistical failure nature; statistical model; time to failure; worst case product reliability; Electron traps; Equations; Failure analysis; Flash memory; Nonvolatile memory; Probability; Reliability theory; Semiconductor device reliability; Statistical distributions; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International

Conference_Location

Orlando, FL

Print_ISBN

0-7803-6587-9

Type

conf

DOI

10.1109/RELPHY.2001.922914

Filename

922914