Analysis of via-void generation mechanism for giga-bit-scale DRAM

Author

Kim, D.H. ; Park, J.S. ; Kim, B.C. ; Lee, S.C. ; Bae, M.K. ; Nam, J.W. ; Park, I.S. ; Kim, H.Y. ; Kim, T.K. ; Choi, D.W. ; Lee, J.Y. ; Kim, J.S. ; Park, Y.J. ; Hong, J.I. ; Park, J.W.

Author_Institution

Semicond. R&D Center, Samsung Electron. Co Ltd., South Korea

fYear

2001

fDate

2001

Firstpage

294

Lastpage

298

Abstract

The via-void generation mechanism in a high density DRAM with high temperature stress was investigated. The reaction of Al with the wetting layer is one of the key factors creating the microstructure. Stress enhancement after the interconnection process enhances the volume shrinkage of the interconnect and finally generates an observable via-void. By ABAQUS simulation, the depth of via formation, passivation material and thickness, and thermal budget of the alloying process were also shown to be the major stress-influencing factors. The void-free, high reliability gigabit-scale DRAM was realized when the Al reaction and interconnection related stress was minimized

Keywords

DRAM chips; aluminium; circuit simulation; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; passivation; shrinkage; thermal stresses; voids (solid); wetting; ABAQUS simulation; Al; Al reaction; Al/wetting layer reaction; DRAM; alloying process; high density DRAM; high temperature stress; interconnection process; interconnection related stress; interconnection volume shrinkage; microstructure; observable via-void; passivation material; passivation thickness; stress enhancement; stress-influencing factors; thermal budget; via formation depth; via-void generation mechanism; void-free high reliability DRAM; Alloying; Artificial intelligence; Etching; Filling; Microstructure; Passivation; Random access memory; Temperature; Thermal stresses; Thermomechanical processes;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International

Conference_Location

Orlando, FL

Print_ISBN

0-7803-6587-9

Type

conf

DOI

10.1109/RELPHY.2001.922917

Filename

922917