III-Nitride devices on Si: Challenges and opportunities

Author

Shahedipour-Sandvik, F. ; Tungare, M. ; Leathersich, J. ; Suvarna, Puneet ; Tompkins, R. ; Jones, K.A.

Author_Institution

Coll. of Nanoscale Sci. & Eng., State Univ. of New York-Albany, Albany, NY, USA

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

The ability to heteroepitaxially deposit high quality III-Nitride semiconductor layers on Si substrates is of great interest because of the numerous advantages offered by Si substrates: low cost, large-scale availability with high quality, good thermal and electrical conductivities as well as the possibility for integration with Si-based electronics.The results of our testing of HEMT structures along with results of our recent work on green light emitting diodes on Si and comparison with those grown on sapphire substrate will be presented.

Keywords

III-V semiconductors; electrical conductivity; elemental semiconductors; high electron mobility transistors; light emitting diodes; silicon; thermal conductivity; HEMT structures; III-nitride devices; Si; electrical conductivity; green light emitting diodes; heteroepitaxially-deposit high-quality III-nitride semiconductor layers; sapphire substrate; silicon substrates; silicon-based electronics; thermal conductivity; Annealing; Educational institutions; Fasteners; Gallium nitride; HEMTs; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135260

Filename

6135260