A Q-band common source low noise amplifier using 90-nm RF CMOS process

Author

Yang, Geliang ; Wang, Zhigong ; Qin, Li ; Wang, Keping

Author_Institution

Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China

Volume

3

fYear

2011

fDate

11-13 March 2011

Firstpage

430

Lastpage

433

Abstract

In this paper, a Q-band common source low noise amplifier (LNA) using 90-nm standard RF-CMOS technology is proposed. The design methodologies for millimeter-wave (MMW) amplifiers are discussed. The post layout simulation results show that S₁₁ is lower than -14 dB and S₂₂ is -11 dB at the peak gain of 14.6 dB at 37.5 GHz with 9.4 GHz bandwidth, the minimum noise figure is lower than 5.5 dB, the input P_1dB and IIP3 are -15.2 dBm and -6.9 dBm, respectively. The whole circuit draws a DC current of 14 mA from one 1.2 V supply and occupies a layout area of 755 μm × 670 μm.

Keywords

CMOS analogue integrated circuits; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; Q-band amplifier; bandwidth 9.4 GHz; common source amplifier; current 14 mA; frequency 37.5 GHz; layout simulation; low noise amplifier; millimeter-wave amplifiers; size 90 nm; standard RF-CMOS technology; voltage 1.2 V; Bandwidth; CMOS integrated circuits; Inductors; Integrated circuit modeling; Layout; Noise measurement; Semiconductor device modeling; CMOS; Q-band; broadband; common source; electromagnetic(EM) simulation; low noise amplifier (LNA); millimeter-wave(MMW);

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Research and Development (ICCRD), 2011 3rd International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-61284-839-6

Type

conf

DOI

10.1109/ICCRD.2011.5764230

Filename

5764230