DocumentCode
3099631
Title
InGaN/GaN microwave varactors with high Q, high-breakdown voltage and high linearity
Author
Wei Lu ; Lingquan Wang ; Siyuan Gu ; Aplin, D.P.R. ; Yu, P.K.L. ; Asbeck, P.M.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA
fYear
2011
fDate
7-9 Dec. 2011
Firstpage
1
Lastpage
2
Abstract
InGaN-GaN Schottky-diode microwave varactors with Q >; 100 at 1 GHz, breakdown voltage >; 120 V, and OIP3 >; 71 dBm are reported. The combination of Q, voltage handling capability, and OIP3 represents advancement from any other reported varactors, and is important for applications in adaptive and tunable base-station radio front-ends.
Keywords
Schottky diodes; microwave devices; varactors; InGaN-GaN; Schottky-diode microwave varactor; frequency 1 GHz; handling capability; high-breakdown voltage; tunable base-station radio front-end; Capacitance-voltage characteristics; Gallium nitride; Leakage current; Metals; Microwave devices; Schottky diodes; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4577-1755-0
Type
conf
DOI
10.1109/ISDRS.2011.6135261
Filename
6135261
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