Title :
The effects of plasma-induced damage on transistor degradation and the relationship to field programmable gate array performance
Author :
Pagaduan, Felino E. ; Lee, J. K Jerry ; Vedagarbha, Veena ; Lui, Kenneth ; Hart, Michael J. ; Gitlin, Daniel ; Takaso, Tomoo ; Kamiyama, Shinya ; Nakayama, Keiichi
Author_Institution :
Xilinx Inc., San Jose, CA, USA
Abstract :
The impact of plasma-induced damage on the speed performance of a field programmable gate array (FPGA) is presented. It was found that FPGA speed degradation induced by product reliability burn-in was directly related to a large negative threshold voltage (Vt) shift of the surface channel PMOS induced by negative bias temperature (BT) stress. Such negative bias temperature instability (NBTI) in the PMOS was shown to be related to specific back-end plasma processing steps. An overall reduction in NBTI of the PMOSFET was observed when certain plasma processing steps were eliminated which in turn resulted in the reduction of FPGA performance degradation
Keywords :
CMOS digital integrated circuits; MOSFET; field programmable gate arrays; integrated circuit reliability; plasma materials processing; thermal stability; thermal stresses; CMOS device lifetime; FPGA; FPGA performance degradation; FPGA speed degradation; NBTI; PMOS; PMOSFET; back-end plasma processing; field programmable gate array; field programmable gate array performance; negative bias temperature instability; negative bias temperature stress; negative threshold voltage shift; plasma processing steps; plasma-induced damage; plasma-induced damage effects; product reliability burn-in; speed performance; surface channel PMOS; transistor degradation; Degradation; Field programmable gate arrays; MOSFET circuits; Negative bias temperature instability; Niobium compounds; Plasma materials processing; Plasma temperature; Stress; Threshold voltage; Titanium compounds;
Conference_Titel :
Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-6587-9
DOI :
10.1109/RELPHY.2001.922921
