Title :
Improvement of MOSFET subthreshold leakage current by its irradiation with hydrogen radicals generated in microwave-excited high-density inert gas plasma
Author :
Saito, Yuji ; Takahashi, Hiroshi ; Ohtsubo, Kazuo ; Hirayama, Masaki ; Sugawa, Shigetoshi ; Aharoni, H. ; Ohmi, Tadahiro
Author_Institution :
Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
Abstract :
MOSFET subthreshold leakage currents are improved by their exposure to hydrogen radicals, generated in microwave-excited Ar-H2 plasma. This mixture was chosen since Ar plasma resulted in both high production of hydrogen radicals and at the same time, only small changes of the exposed MOS characteristics. Experiments including exposure to plasma with different total and partial pressures and inert gases are presented
Keywords :
MOSFET; argon; free radicals; hydrogen; leakage currents; plasma density; plasma materials processing; plasma pressure; plasma radiofrequency heating; semiconductor device testing; surface treatment; Ar plasma; Ar-H2; MOSFET subthreshold leakage current; exposed MOS characteristics; hydrogen radical exposure; hydrogen radical irradiation; hydrogen radical production; hydrogen radicals; inert gases; microwave-excited Ar-H2 plasma; microwave-excited high-density inert gas plasma; partial pressure; plasma; total pressure; Gases; Hydrogen; MOSFET circuits; Microwave generation; Plasma applications; Plasma devices; Plasma measurements; Plasma properties; Subthreshold current; Surface cleaning;
Conference_Titel :
Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-6587-9
DOI :
10.1109/RELPHY.2001.922922
