Improvement of MOSFET subthreshold leakage current by its irradiation with hydrogen radicals generated in microwave-excited high-density inert gas plasma

Author

Saito, Yuji ; Takahashi, Hiroshi ; Ohtsubo, Kazuo ; Hirayama, Masaki ; Sugawa, Shigetoshi ; Aharoni, H. ; Ohmi, Tadahiro

Author_Institution

Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan

fYear

2001

fDate

2001

Firstpage

319

Lastpage

326

Abstract

MOSFET subthreshold leakage currents are improved by their exposure to hydrogen radicals, generated in microwave-excited Ar-H₂ plasma. This mixture was chosen since Ar plasma resulted in both high production of hydrogen radicals and at the same time, only small changes of the exposed MOS characteristics. Experiments including exposure to plasma with different total and partial pressures and inert gases are presented

Keywords

MOSFET; argon; free radicals; hydrogen; leakage currents; plasma density; plasma materials processing; plasma pressure; plasma radiofrequency heating; semiconductor device testing; surface treatment; Ar plasma; Ar-H₂; MOSFET subthreshold leakage current; exposed MOS characteristics; hydrogen radical exposure; hydrogen radical irradiation; hydrogen radical production; hydrogen radicals; inert gases; microwave-excited Ar-H₂ plasma; microwave-excited high-density inert gas plasma; partial pressure; plasma; total pressure; Gases; Hydrogen; MOSFET circuits; Microwave generation; Plasma applications; Plasma devices; Plasma measurements; Plasma properties; Subthreshold current; Surface cleaning;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International

Conference_Location

Orlando, FL

Print_ISBN

0-7803-6587-9

Type

conf

DOI

10.1109/RELPHY.2001.922922

Filename

922922