DocumentCode :
3099684
Title :
ZnO thin film transistors by low temperature deposition plasma-enhanced atomic layer deposition in a showerhead reactor
Author :
Ramirez, J. Israel ; Li, Yuanyuan V. ; Zhao, Dalong A. ; Jackson, Thomas N.
Author_Institution :
Dept. of Electr. Eng., Penn State Univ., University Park, PA, USA
fYear :
2011
fDate :
7-9 Dec. 2011
Firstpage :
1
Lastpage :
2
Abstract :
Oxide semiconductor TFTs are of interest where low-cost, high mobility, and compatibility with flexible substrates is required. We have previously demonstrated high quality thin-film transistors (TFTs) using ZnO and Al2O3 deposited at low temperature (200°C) by weak oxidant, plasma-enhanced atomic layer deposition (PEALD) using a reactor utilizing a pump and purge mode of operation [1]. We also reported the use of thin, weak oxidant, PEALD Al2O3 films as gate insulator for scaled III-V MOSFETs [2]. In this work, we report TFTs fabricated using ZnO and Al2O3 deposited in a novel weak oxidant PEALD reactor using a showerhead to dispense the reactant gases and an integrated load-lock.
Keywords :
II-VI semiconductors; MOSFET; aluminium compounds; atomic layer deposition; plasma deposition; thin film transistors; zinc compounds; Al2O3; ZnO; flexible substrates; gate insulator; high-quality TFT; low-temperature deposition; oxide semiconductor TFT; plasma-enhanced atomic layer deposition; pump-purge mode; scaled III-V MOSFET; showerhead reactor; temperature 200 degC; weak-oxidant PEALD reactor; zinc oxide thin film transistors; Aluminum oxide; Atomic layer deposition; Educational institutions; Gases; Plasmas; Thin film transistors; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
Type :
conf
DOI :
10.1109/ISDRS.2011.6135265
Filename :
6135265
Link To Document :
بازگشت