The quantitative assessment of stress-induced voiding in process qualification

Author

Fischer, A.H. ; Zitzelsberger, A.E.

Author_Institution

Infineon Technol. AG, Munich, Germany

fYear

2001

fDate

2001

Firstpage

334

Lastpage

340

Abstract

Stress-induced voiding was studied on submicron aluminum interconnects. A phenomenological model is derived to describe the median time of failures which are caused by the growth of stress-induced voids. Based on this model, a procedure for lifetime prediction is proposed. Furthermore, the influence of stress-induced voids on the electromigration performance is discussed. It is shown that a reduced current density exponent is found in stress-induced void damaged lines, leading to a decrease of electromigration lifetimes

Keywords

aluminium; current density; electromigration; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; internal stresses; voids (solid); Al; aluminum interconnects; current density exponent; electromigration lifetime; electromigration performance; lifetime prediction; median time of failure; phenomenological model; process qualification; stress-induced void damaged lines; stress-induced voiding; stress-induced voids; Aluminum; Current density; Electrical resistance measurement; Electromigration; Equations; Integrated circuit interconnections; Qualifications; Temperature; Tensile stress; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International

Conference_Location

Orlando, FL

Print_ISBN

0-7803-6587-9

Type

conf

DOI

10.1109/RELPHY.2001.922924

Filename

922924