Trade-off between reliability and post-CMP defects during recrystallization anneal for copper damascene interconnects

Author

Alers, G.B. ; Dornisch, D. ; Siri, J. ; Kattige, K. ; Tam, L. ; Broadbent, E. ; Ray, G.W.

Author_Institution

Novellus Syst., San Jose, CA, USA

fYear

2001

fDate

2001

Firstpage

350

Lastpage

354

Abstract

Thermal treatments of electroplated copper films before CMP can increase grain size and therefore reduce resistance and improve electromigration reliability. However, high temperature excursions can also increase the stress levels in thick metal layers due to differential thermal expansion, which in turn can increase the occurrence of post-CMP defects such as pullouts and line voids. In this paper, we discuss this trade-off between electromigration and defects and the influence of plating chemistry and barrier layer on reducing this tradeoff

Keywords

chemical mechanical polishing; copper; electromigration; failure analysis; grain size; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; recrystallisation annealing; thermal expansion; voids (solid); CMP; Cu; barrier; barrier layer; copper damascene interconnects; defects; differential thermal expansion; electromigration; electromigration reliability; electroplated copper films; grain size; high temperature excursions; line voids; plating chemistry; post-CMP defects; pullouts; recrystallization anneal; reliability; resistance; stress levels; thermal treatments; thick metal layers; Annealing; Chemistry; Copper; Electromigration; Grain size; Temperature; Testing; Thermal expansion; Thermal resistance; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International

Conference_Location

Orlando, FL

Print_ISBN

0-7803-6587-9

Type

conf

DOI

10.1109/RELPHY.2001.922926

Filename

922926