DocumentCode
3099756
Title
Relation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specifications
Author
Degraeve, Robin ; Kaczer, Ben ; De Keersgieter, An ; Groeseneken, Guido
Author_Institution
IMEC, Leuven, Belgium
fYear
2001
fDate
2001
Firstpage
360
Lastpage
366
Abstract
A method to determine the breakdown position in short channel nMOSFETs is introduced. We find that soft breakdown occurs exclusively in the transistor channel while the hardest circuit killing breakdowns occur above the source and drain extension regions. Since these breakdowns make up only a small fraction of all breakdowns, a relaxation of the reliability specification is possible
Keywords
MOSFET; integrated circuit reliability; semiconductor device breakdown; semiconductor device reliability; semiconductor device testing; breakdown location; breakdown mode; breakdown position; circuit killing breakdowns; drain extension region; reliability specification; reliability specifications; short channel NMOSFETs; soft breakdown; source region; transistor channel; Breakdown voltage; Current density; Digital circuits; Electric breakdown; Extrapolation; Low voltage; MOSFETs; Predictive models; Stress; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International
Conference_Location
Orlando, FL
Print_ISBN
0-7803-6587-9
Type
conf
DOI
10.1109/RELPHY.2001.922928
Filename
922928
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