Soft breakdown triggers for large area capacitors under constant voltage stress

Author

Schmitz, J. ; Kretschmann, A.J. ; Tuinhout, H.P. ; Woerlee, P.H.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

2001

fDate

2001

Firstpage

393

Lastpage

398

Abstract

This work quantitatively compares breakdown triggers for constant voltage stress of large area NMOS capacitors (up to 10 mm²) with 1.8 to 12 nm gate oxide thickness (with negative V_G). We conclude that in the studied range, breakdown is identified more reliably with a current step trigger than through increased current fluctuation (RMS). We also present data filtering algorithms that significantly enhance the ratio between the breakdown signal and background noise level

Keywords

CMOS integrated circuits; MOS capacitors; current fluctuations; electric breakdown; integrated circuit noise; integrated circuit reliability; integrated circuit testing; 1.8 to 12 nm; CMOS ICs; SiO₂-Si; background noise level; breakdown identification; breakdown signal; breakdown triggers; constant voltage stress; current fluctuation; current step trigger; data filtering algorithms; gate oxide thickness; large area NMOS capacitors; large area capacitors; negative gate voltage; soft breakdown triggers; Breakdown voltage; Capacitors; Carbon capture and storage; Dielectric breakdown; Electric breakdown; Laboratories; MOS devices; Stress; Testing; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International

Conference_Location

Orlando, FL

Print_ISBN

0-7803-6587-9

Type

conf

DOI

10.1109/RELPHY.2001.922932

Filename

922932