Heterostructure design and demonstration of InGaSb channel III-V CMOS transistors

Despite burgeoning interest in III-V´s for realizing high performance transistors at low power, III-V MOSFEts have been plagued by poor PMOS performance. Realizing high mobility InGaAs PMOS [1] and Ge NMOS [2] has proven to be difficult. To avoid complications in CMOS circuit design and manufacturing [3], it is favorable to employ a single material system that enables both good NMOS and PMOS transistors. We chose to work on the 6.1-6.2Å lattice constant system with InGaSb as the channel material because of its advantages in terms of band engineering and high mobility/offsets for both electrons and holes [4-5].