Title :
A new physical and quantitative width dependent hot carrier model for shallow-trench-isolated CMOS devices
Author :
Chung, Steve S. ; Chen, S.J. ; Yang, W.-J. ; Yang, J.-J.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this paper, we present new results on width dependent hot-carrier (HC) degradation for shallow-trench-isolated (STI) CMOS devices. Experimental data shows that the drain current degradation is enhanced for reducing gate width. New models and mechanisms are proposed to explain the width dependent degradation for both n-channel and p-channel MOSFETs, where new monitors are developed for both types of devices respectively. In n-MOSFETs, the interface state generation at the STI-edge is enhanced for narrow width devices. However, for p-MOSFETs, a two-dimensional channel shortening model is introduced. The channel shortening induced oxide damage is the dominant mechanism for the drain current degradation. Both are found to be strongly related to the mechanical stress on the border of the trench. This is a very crucial issue for present and future CMOS ULSI using STI technologies
Keywords :
CMOS integrated circuits; MOSFET; ULSI; hot carriers; interface states; isolation technology; semiconductor device models; semiconductor device testing; 2D channel shortening model; CMOS ULSI; STI CMOS devices; STI technologies; STI-edge; channel shortening induced oxide damage; drain current degradation; gate width; interface state generation; mechanical stress; models; n-MOSFETs; n-channel MOSFETs; p-MOSFETs; p-channel MOSFETs; physical width dependent hot carrier model; quantitative width dependent hot carrier model; shallow-trench-isolated CMOS devices; trench border; width dependent degradation; width dependent hot-carrier degradation; CMOS technology; Degradation; Electrons; Hot carriers; Interface states; Isolation technology; MOSFET circuits; Semiconductor device modeling; Stress measurement; Ultra large scale integration;
Conference_Titel :
Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-6587-9
DOI :
10.1109/RELPHY.2001.922936