Title :
Hot-carrier reliability of p-MOSFET with ultra-thin silicon nitride gate dielectric
Author :
Polishchuk, Igor ; Yeo, Yee-Chia ; Lu, Qiang ; King, Tsu-Jae ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
The degradation of 100 nm effective channel length pMOS transistors with 14 Å equivalent oxide thickness jet vapor deposited (JVD) Si3N4 gate dielectric under hot-carrier stress is studied. Interface-state generation is identified as the dominant degradation mechanism. Hot-carrier-induced gate leakage may become a new reliability concern. Hot-carrier reliability of 14 Å Si3N4 transistors is compared to the reliability of 16 Å SiO2 transistors
Keywords :
MOSFET; dielectric thin films; hot carriers; interface states; jets; leakage currents; semiconductor device measurement; semiconductor device reliability; silicon compounds; vapour deposition; 100 nm; Si3N4; Si3N4 transistors; SiO2; SiO2 transistors; dominant degradation mechanism; effective channel length; equivalent oxide thickness; hot-carrier reliability; hot-carrier stress; hot-carrier-induced gate leakage; interface-state generation; jet vapor deposited Si3N4 gate dielectric; p-MOSFET; pMOS transistors; reliability; ultra-thin silicon nitride gate dielectric; CMOS process; Degradation; Dielectric materials; Fabrication; High K dielectric materials; High-K gate dielectrics; Hot carriers; MOSFET circuits; Silicon; Stress;
Conference_Titel :
Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-6587-9
DOI :
10.1109/RELPHY.2001.922937
