Novel MOSFET structure using p-n junction gate for ultra-low subthreshold-swing

Author

Kim, Garam ; Sun, Min-Chul ; Kim, Sang Wan ; Kim, Hyun Woo ; Kim, Jang Hyun ; Park, Euy Hwan ; Kim, Hyungjin ; Park, Byung-Gook

Author_Institution

Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

As complementary metal oxide semiconductor (CMOS) has been scaled down and supply voltage has been reduced, it becomes important to reduce subthreshold swing (SS) in order to obtain high on/off current ratio. To decrease SS below 60 mV/dec, tunneling field effect transistor (TFET) has been reported and studied recently[1-3]. However, as TFET uses band-to-band tunneling as its current source, it is difficult to obtain high on-current. In order to solve this problem of the conventional TFET and maintain high on-current while lowering SS, novel device using p-n junction gate is proposed in this paper.

Keywords

CMOS integrated circuits; MOSFET; p-n junctions; tunnel transistors; CMOS; MOSFET structure; band-to-band tunneling; complementary metal oxide semiconductor; high on-off current ratio; p-n junction gate; tunneling field effect transistor; ultra-low subthreshold-swing; Doping; Educational institutions; Logic gates; MOSFET circuits; P-n junctions; Shape; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135281

Filename

6135281