• DocumentCode
    3100004
  • Title

    Impact of electrolyte deposition technique on resistive Pt/Ta2O5/Cu switch performance

  • Author

    Shrestha, Pragya ; Verma, Mohini ; Kang, Yuhong ; Cheung, Kin P. ; Baumgart, Helmut ; Orlowski, Marius

  • Author_Institution
    Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
  • fYear
    2011
  • fDate
    7-9 Dec. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Resistive memory is being considered for next-generation non-volatile memory due to the inherent simplicity, scalability and low cost [1, 2]. Additionally, these devices show potential to replace static random access memory (SRAM) as high performance switches for reconfigurable devices [3, 4]. These devices operate by changing resistance from high (Roff) to low (Ron) values in response to applied voltage due to the formation and rupture of a metal filament as shown in Figure 1.
  • Keywords
    copper; electric resistance; electrolytes; platinum; random-access storage; switches; tantalum compounds; Pt-Ta2O5-Cu; electrolyte deposition technique; high performance switch; metal filament; next-generation nonvolatile memory; reconfigurable device; resistive memory; resistive switch performance; static random access memory; Copper; Reliability; Solids; Switches; USA Councils;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium (ISDRS), 2011 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4577-1755-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2011.6135283
  • Filename
    6135283
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3100004