Title :
Intersubband electro-optics and frequency conversion at normal incidence
Author :
Xie, H. ; Wang, W.I. ; Meyer, J.R. ; Hoffman, C.A.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
We present new classes of E-O modulators and frequency converters based on L-valley intersubband transitions in GaSb-based QW systems. Effective-mass anisotropy and the tilt of the growth direction with respect to the principal axes of the ellipsoidal constant-energy surfaces of L valleys enable these novel devices to operate at normal incidence. An additional advantage of the GaSb-based QW system is that the large conduction-band offset of the GaSb/AlSb system (up to 1 eV) allows operation over a wide infrared range covering longwave (8-12 μm), midwave (3-5 μm), and even shorter wavelengths
Keywords :
electro-optical modulation; 3 to 5 micron; 8 to 12 micron; GaSb-AlSb; L-valley intersubband transitions; conduction-band offset; effective-mass anisotropy; electro-optic modulators; frequency converters; infrared region; normal incidence; quantum well systems; tilted growth; Anisotropic magnetoresistance; Bandwidth; Frequency conversion; Frequency modulation; Optical coupling; Optical devices; Optical frequency conversion; Optical modulation; Optical surface waves; Oscillators;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586871
