Title :
High speed AlGaAs/GaAs HBT circuits for optical fiber communications
Author :
Wang, K.C. ; Pedrotti, Ken D. ; Runge, Klaus
Author_Institution :
Sci. Center, Rockwell Int. Corp., Thousand Oaks, CA, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
Summary form only given. With AlGaAs-GaAs HBTs, a number of ultrahigh speed circuits for time division multiplexing (TDM) optical links have been reported. The state-of-the-art speed performance of these circuits is summarized. GaAs HBT technology is expected to support a 40 Gb/s TDM optical network; research and development are being carried out to achieve this
Keywords :
aluminium compounds; 40 Gbit/s; AlGaAs-GaAs; AlGaAs-GaAs HBTs; GaAs HBT technology; TDM optical links; TDM optical network; high speed AlGaAs/GaAs HBT circuits; optical fiber communications; state-of-the-art speed performance; time division multiplexing; ultrahigh speed circuits; Bandwidth; Driver circuits; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit technology; Optical arrays; Optical fiber communication; Optical receivers; Time division multiplexing; Wavelength division multiplexing;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586879
