Title :
Gate-induced drain leakage current of MOSFET with junction doping dependence
Author :
Park, Hyunho ; Choi, Byoungdeog
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co., Ltd., Hwasung, South Korea
Abstract :
The GIDL current characteristics was analyzed and discussed in MOSFETs for the channel and junction doping dependences. And the lateral electric field change by varying the drain voltage and the body bias dependence were evaluated and characterized in detail.
Keywords :
MOSFET; leakage currents; GIDL current characteristics; MOSFET; body bias dependence; channel doping dependences; drain voltage; gate-induced drain leakage current; junction doping dependence; lateral electric field; Doping; Educational institutions; Electric fields; Junctions; Leakage current; Logic gates; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135291
