DocumentCode
3100192
Title
Gate-induced drain leakage current of MOSFET with junction doping dependence
Author
Park, Hyunho ; Choi, Byoungdeog
Author_Institution
Semicond. R&D Center, Samsung Electron. Co., Ltd., Hwasung, South Korea
fYear
2011
fDate
7-9 Dec. 2011
Firstpage
1
Lastpage
2
Abstract
The GIDL current characteristics was analyzed and discussed in MOSFETs for the channel and junction doping dependences. And the lateral electric field change by varying the drain voltage and the body bias dependence were evaluated and characterized in detail.
Keywords
MOSFET; leakage currents; GIDL current characteristics; MOSFET; body bias dependence; channel doping dependences; drain voltage; gate-induced drain leakage current; junction doping dependence; lateral electric field; Doping; Educational institutions; Electric fields; Junctions; Leakage current; Logic gates; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4577-1755-0
Type
conf
DOI
10.1109/ISDRS.2011.6135291
Filename
6135291
Link To Document