Title :
Low-temperature AlGaAs-GaAs epitaxial lift-off metal-semiconductor-metal photodetector
Author :
Hargis, M.C. ; Drabik, T.J. ; Woodall, J.M.
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
Summary form only given. Metal semiconductor metal (MSM) photodetectors were fabricated from epitaxial material containing low temperature (LT) AlGaAs window (or cladding) layers and tested. Due to the high resistivity of the LT-AlGaAs, the epitaxial lift off (ELO)-NP MSM performs comparably to its on-wafer complement
Keywords :
aluminium compounds; AlGaAs-GaAs; AlGaAs:GaAs; cladding layers; epitaxial lift-off metal-semiconductor-metal photodetector; epitaxial material; high resistivity; low temperature; low-temperature; on-wafer complement; optical testing; window layers; Dark current; Degradation; Detectors; Electrodes; Gallium arsenide; Lithography; Passivation; Photodetectors; Substrates; Voltage;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586885
